MODELING OF TRAPPED PLAMA MODE OSCILIATIONS IN AP+ N – N+ SILICON DIODE

Authors

  • COG Obah Department of Electrical & electronic Engineering University of Nigeria, Nsukka, Nigeria.

DOI:

https://doi.org/10.4314/njt.31.335

Abstract

This paper proposes an approach for obtaining a relatively simple set of equations which apply to the description of TRAPATT phenomenon and applies it to model trapped-plasma mode oscillations in a p+ n – n+ silicon diode.

Typical voltage, conduction current, electric field and carrier charge wave-forms are presented for a square wave of drive current. The diffusion transport phenomenon is shown to affect the diode operating characteristics. The subperiods of the diode voltage and conduction current are found to be useful parameters in dilineating the diode operating frequency limits.

The influence of the diode physical parameters and the effects of the package circuit parasitic on the diode performance are explored, and curves for practical design presented. The predicted RF performance shows good agreement with experimental measurement for a typical L-band TRAPATT oscillator.

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Section

Research papers of General Interest

How to Cite

MODELING OF TRAPPED PLAMA MODE OSCILIATIONS IN AP+ N – N+ SILICON DIODE. (2002). Nigerian Journal of Technology, 3(1), 1-14. https://doi.org/10.4314/njt.31.335