HEAT FLOW IN A FINITE ISOLATED PULSED AVALANCHE SEMICONDUCTOR DIODE HEAT SINK FOR SHORT-TERM SYSTEM APPLICATIONS

Authors

  • COG Obah DEPARTMENT OF ELECTRICAL/ELECTRONIC ENGINEERING UNIVERSITY OF NIGERIA, NSUKKA.

DOI:

https://doi.org/10.4314/njt.51.355

Abstract

An analytical time solution of temperature rise of a finite heat sink under adiabatic boundary, conditions is proposed for partial system applications requiring short-term and low duty operation of pulsed high-power high-efficiency avalanche semiconductor devices. The temperature rise as a function of the heat sink size is
computed, and useful practical design curves for a specified operation time presented.

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Section

Research papers of General Interest

How to Cite

HEAT FLOW IN A FINITE ISOLATED PULSED AVALANCHE SEMICONDUCTOR DIODE HEAT SINK FOR SHORT-TERM SYSTEM APPLICATIONS. (2002). Nigerian Journal of Technology, 5(1), 60-65. https://doi.org/10.4314/njt.51.355