HEAT FLOW IN A FINITE ISOLATED PULSED AVALANCHE SEMICONDUCTOR DIODE HEAT SINK FOR SHORT-TERM SYSTEM APPLICATIONS
DOI:
https://doi.org/10.4314/njt.51.355Abstract
An analytical time solution of temperature rise of a finite heat sink under adiabatic boundary, conditions is proposed for partial system applications requiring short-term and low duty operation of pulsed high-power high-efficiency avalanche semiconductor devices. The temperature rise as a function of the heat sink size iscomputed, and useful practical design curves for a specified operation time presented.
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