TEMPERATURE DEPENDENT MODELS OF SEMICONDUCTOR DEVICES FOR COMPUTER AIDED ANALYSIS OF ELECTRONIC TRANSDUCERS
DOI:
https://doi.org/10.4314/njt.61.360Abstract
The paper presents an investigation of the temperature dependent model of a diode and bipolar transistor built-in to the NAP-2 program and comparison of these models with experimentally measured characteristics of the BA 100 diode and BC 109 transistor. The detail of the modelling technique has been discussed and final results presented. The Electronic Circuits Analysis NAP-2 Program has been recently installed in the University of Nigeria Computing Centre through the courtesy of Institute of Circuit Theory and Telecommunication, Technical University of Denemark and the great effort of the Computing Centre staff especially Mr. A. McIntosh who adopted the program to the capability of the existing installation.
Downloads
Issue
Section
License
The contents of the articles are the sole opinion of the author(s) and not of NIJOTECH.
NIJOTECH allows open access for distribution of the published articles in any media so long as whole (not part) of articles are distributed.
A copyright and statement of originality documents will need to be filled out clearly and signed prior to publication of an accepted article. The Copyright form can be downloaded from http://nijotech.com/downloads/COPYRIGHT%20FORM.pdf while the Statement of Originality is in http://nijotech.com/downloads/Statement%20of%20Originality.pdf
For articles that were developed from funded research, a clear acknowledgement of such support should be mentioned in the article with relevant references. Authors are expected to provide complete information on the sponsorship and intellectual property rights of the article together with all exceptions.
It is forbidden to publish the same research report in more than one journal.
How to Cite
