MEASUREMENT OF MINORITY-ARRIER LIFETIME IN SILICON SOLAR CELLS BY THE PHOTOCONDUCTIVE DECAY METHOD
DOI:
https://doi.org/10.4314/njt.61.364Abstract
One of the critical parameters for the overall efficiency of solar cells is the lifetime of minority carriers. This manuscript describes the measurement of minority - carrier lifetime of silicon solar cells, at room temperature, by photoconductive decay method. The Holobeam, Model 655 Double-Pulsed Holographic
system, is used as the light source. This consists of a Q-switched, pulsed ruby laser oscillator with two ruby laser amplifiers. Silicon samples with projected lifetimes of less than O.25? secs to about 8? secs are used for the investigation, and the results obtained using this technique, compare favourably with the results furnished by the manufacturers.
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